| PART |
Description |
Maker |
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F3DPQ-A0 |
600 V - 20 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| BUP304 Q67078-A4200-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| RJH60F0DPK RJH60F0DPK-00-T0 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH1CF5RDPQ-80 RJH1CF5RDPQ-80-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7ADPK10 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7ADPK11 RJH60F7ADPK-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
